磷化铟衬底（InP Wafer）
发布于2021-05-28 10:21 文章来源：未知
磷化铟衬底 InP Wafers
 Provided By Wafer Technology
♦直拉法（CZ）工艺，保证了材料的纯度。
♦所有基片都经过精密抛光并充保护气氛保护，满足Epi-Ready使用要求。 ♦晶向选择：可提供其他晶向，如(110)。 ♦先进的光学测量技术，包括椭偏仪、粒子监测器等，保证我们生产的每一片基片的表面干净无污染。 ♦生产厂家: 英国；德国 Mateck ；日本住友 |
Wafer Specifications | |||||||||||
| Diameter Slices | 2" | |||||||||||
| Orientation | (100) +/-0.1° | |||||||||||
| Diameter (mm) | 50.5 +/- 0.4 | |||||||||||
| Flat Option | EJ | |||||||||||
| Flat Tolerance | +/- 0.1° | |||||||||||
| Major Flat Length (mm) | 16 +/- 2 | |||||||||||
| Minor Flat Length (mm) | 8 +/- 1 | |||||||||||
| Thickness (um) |
350 +/- 25 or 500 +/- 25 |
|||||||||||
| Electrical and Dopant Specifications | ||||||||||||
| Dopant | Type |
Carrier
Concentration cm-3
|
Mobility
cm^2•V^-1•s^-1
|
E.P.D.
cm^-2 |
||||||||
| Undoped | n-type | <=10^16 | >=4200 | <=5000 | ||||||||
| Iron | n-type | Semi-Insulating | >=1000 | <=5000 | ||||||||
| Tin | n-type | (7-40)*10^17 | 2500-750 | <=50000 | ||||||||
| Sulphur | n-type | (1-10)*10^18 | 2000-1000 | <=1000 | ||||||||
| Zinc | p-type | (1-6)*10^18 | Not Specified | <=1000 | ||||||||
| Low Zinc | p-type | (1-6)*10^17 | Not Specified | <=5000 | ||||||||
| Flatness Specifications | ||||||||||||
| Wafer Form | 2" | |||||||||||
| Polish/Etched | TTV(um) | <12 | ||||||||||
| Bow(um) | <12 | |||||||||||
| Warp(um) | <12 | |||||||||||
| Polish/Polish | TTV(um) | <12 | ||||||||||
| Bow(um) | <12 | |||||||||||
| Warp(um) | <12 | |||||||||||
